2SC4488T-AN Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 100mV.When VCE saturation is 400mV @ 40mA, 400mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 6V for high efficiency.An input voltage of 100V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2SC4488T-AN Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at 6V
2SC4488T-AN Applications
There are a lot of ON Semiconductor 2SC4488T-AN applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
