2SCR523UBTL Overview

In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 100mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 200mA to achieve high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In this part, there is a transition frequency of 350MHz.A breakdown input voltage of 50V volts can be used.Collector current can be as low as 100mA volts at its maximum.

2SCR523UBTL Features

the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 350MHz

2SCR523UBTL Applications

There are a lot of ROHM Semiconductor 2SCR523UBTL applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface