2SD1781KT146R Overview

In this device, the DC current gain is 180 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 100mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages of 800mA should be maintained to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.A transition frequency of 150MHz is present in the part.An input voltage of 32V volts is the breakdown voltage.The maximum collector current is 800mA volts.

2SD1781KT146R Features

the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 150MHz

2SD1781KT146R Applications

There are a lot of ROHM Semiconductor 2SD1781KT146R applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting