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2SD2652T106

2SD2652T106

2SD2652T106

ROHM Semiconductor

2SD2652T106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2652T106 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 12V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1.5A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2652
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 400MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage 12V
Transition Frequency 400MHz
Collector Emitter Saturation Voltage 80mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $9.753120 $9.75312
10 $9.201057 $92.01057
100 $8.680242 $868.0242
500 $8.188908 $4094.454
1000 $7.725385 $7725.385
2SD2652T106 Product Details

2SD2652T106 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 200mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 80mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 25mA, 500mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1.5A.As you can see, the part has a transition frequency of 400MHz.Single BJT transistor can be broken down at a voltage of 12V volts.In extreme cases, the collector current can be as low as 1.5A volts.

2SD2652T106 Features


the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 400MHz

2SD2652T106 Applications


There are a lot of ROHM Semiconductor 2SD2652T106 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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