2SD2652T106 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 200mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 80mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 25mA, 500mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1.5A.As you can see, the part has a transition frequency of 400MHz.Single BJT transistor can be broken down at a voltage of 12V volts.In extreme cases, the collector current can be as low as 1.5A volts.
2SD2652T106 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 400MHz
2SD2652T106 Applications
There are a lot of ROHM Semiconductor 2SD2652T106 applications of single BJT transistors.
- Muting
-
- Driver
-
- Inverter
-
- Interface
-
