EM6M2T2R

new-10%

Manufacturer part number:EM6M2T2R

Manufacturer:ROHM Semiconductor

Description:MOSFET N/P-CH 20V 0.2A EMT6

Case Package:SOT-23

Datasheet:EM6M2T2R Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	Other Transistors
Max Power Dissipation	150mW
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Base Part Number	*M2
Pin Count	6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	150mW
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1 Ω @ 200mA, 4V
Vgs(th) (Max) @ Id	1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	25pF @ 10V
Drain to Source Voltage (Vdss)	20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)	200mA
Drain Current-Max (Abs) (ID)	0.2A
Drain-source On Resistance-Max	1.4Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free