FDS6930B

new-10%

Manufacturer part number:FDS6930B

Manufacturer:ON Semiconductor

Description:FDS6930B datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDS6930B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	38MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Max Power Dissipation	2W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	5.5A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	2
Voltage	30V
Current	55A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	6 ns
Power - Max	900mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	38m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	412pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	3.8nC @ 5V
Rise Time	6ns
Fall Time (Typ)	2 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	5.5A
Threshold Voltage	1.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	1.9 V
Feedback Cap-Max (Crss)	60 pF
Height	1.5mm
Length	5mm
Width	4mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free