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SQJ912BEP-T1_GE3

SQJ912BEP-T1_GE3

SQJ912BEP-T1_GE3

Vishay Siliconix

VISHAY - SQJ912BEP-T1_GE3 - Dual MOSFET, Dual N Channel, 30 A, 40 V, 0.009 ohm, 10 V, 1.5 V

SOT-23

SQJ912BEP-T1_GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2018
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 48W Tc
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 11mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drain to Source Voltage (Vdss) 40V
FET Feature Standard
Drain to Source Resistance 9mOhm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.005206 $7.005206
10 $6.608685 $66.08685
100 $6.234608 $623.4608
500 $5.881706 $2940.853
1000 $5.548779 $5548.779

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