CSD75208W1015T

new-10%

Manufacturer part number:CSD75208W1015T

Manufacturer:Texas Instruments

Description:TEXAS INSTRUMENTS CSD75208W1015TDual MOSFET, Dual P Channel, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV

Case Package:SOT-23

Datasheet:CSD75208W1015T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UFBGA, DSBGA
Number of Pins	6
Weight	1.700971mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation	750mW
Terminal Position	BOTTOM
Terminal Form	BALL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD75207
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	9 ns
FET Type	2 P-Channel (Dual) Common Source
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	68m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	410pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 4.5V
Rise Time	5ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	1.6A
Threshold Voltage	-800mV
Gate to Source Voltage (Vgs)	-6V
Drain-source On Resistance-Max	0.15Ohm
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Feedback Cap-Max (Crss)	10 pF
Height	1mm
Length	1.5mm
Width	1.8mm
Thickness	2mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free