HP8K22TB

new-10%

Manufacturer part number:HP8K22TB

Manufacturer:ROHM Semiconductor

Description:30V NCH NCH MID POWER MOSFET

Case Package:SOT-23

Datasheet:HP8K22TB Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN SOURCE
Power - Max	25W
FET Type	2 N-Channel (Half Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1080pF @ 15V
Current - Continuous Drain (Id) @ 25°C	27A 57A
Gate Charge (Qg) (Max) @ Vgs	16.8nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drain Current-Max (Abs) (ID)	12A
Drain-source On Resistance-Max	0.0133Ohm
Pulsed Drain Current-Max (IDM)	48A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	11.4 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	ROHS3 Compliant