FZT651TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT651TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2012
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Frequency
175MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT651
Number of Elements
1
Voltage
60V
Element Configuration
Single
Current
3A
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
175MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
175MHz
Collector Emitter Saturation Voltage
430mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
7V
hFE Min
100
Max Junction Temperature (Tj)
150°C
Continuous Collector Current
3A
Height
1.8mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.31960
$0.3196
2,000
$0.29283
$0.58566
5,000
$0.27498
$1.3749
10,000
$0.27200
$2.72
FZT651TA Product Details
FZT651TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.A collector emitter saturation voltage of 430mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 300mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 3A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.In the part, the transition frequency is 175MHz.This device can take an input voltage of 60V volts before it breaks down.The maximum collector current is 3A volts.
FZT651TA Features
the DC current gain for this device is 100 @ 500mA 2V a collector emitter saturation voltage of 430mV the vce saturation(Max) is 600mV @ 300mA, 3A the emitter base voltage is kept at 7V the current rating of this device is 3A a transition frequency of 175MHz
FZT651TA Applications
There are a lot of Diodes Incorporated FZT651TA applications of single BJT transistors.