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FZT651TA

FZT651TA

FZT651TA

Diodes Incorporated

FZT651TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT651TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2012
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Frequency 175MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT651
Number of Elements 1
Voltage 60V
Element Configuration Single
Current 3A
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 175MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 175MHz
Collector Emitter Saturation Voltage 430mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
hFE Min 100
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 3A
Height 1.8mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.31960 $0.3196
2,000 $0.29283 $0.58566
5,000 $0.27498 $1.3749
10,000 $0.27200 $2.72
FZT651TA Product Details

FZT651TA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.A collector emitter saturation voltage of 430mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 300mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 3A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.In the part, the transition frequency is 175MHz.This device can take an input voltage of 60V volts before it breaks down.The maximum collector current is 3A volts.

FZT651TA Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 175MHz

FZT651TA Applications


There are a lot of Diodes Incorporated FZT651TA applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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