QS6J11TR

new-10%

Manufacturer part number:QS6J11TR

Manufacturer:ROHM Semiconductor

Description:MOSFET 2P-CH 12V 2A TSMT6

Case Package:SOT-23

Datasheet:QS6J11TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Subcategory	Other Transistors
Max Power Dissipation	600mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Base Part Number	*J11
Pin Count	6
JESD-30 Code	R-PDSO-G8
Number of Elements	1
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	10 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	105m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	770pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	6.5nC @ 4.5V
Rise Time	17ns
Drain to Source Voltage (Vdss)	12V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	2A
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	2A
Drain-source On Resistance-Max	0.105Ohm
Pulsed Drain Current-Max (IDM)	8A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free