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RQ3E070BNTB

RQ3E070BNTB

RQ3E070BNTB

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 27m Ω @ 7A, 10V ±20V 410pF @ 15V 8.9nC @ 10V 30V 8-PowerVDFN

SOT-23

RQ3E070BNTB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 20mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Gate Charge (Qg) (Max) @ Vgs 8.9nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 7A
Threshold Voltage 2.5V
Drain Current-Max (Abs) (ID) 7A
DS Breakdown Voltage-Min 30V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.405375 $0.405375
10 $0.382429 $3.82429
100 $0.360783 $36.0783
500 $0.340361 $170.1805
1000 $0.321095 $321.095
RQ3E070BNTB Product Details

RQ3E070BNTB Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 410pF @ 15V.This device has a continuous drain current (ID) of [7A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 7A.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2.5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

RQ3E070BNTB Features


a continuous drain current (ID) of 7A
a threshold voltage of 2.5V
a 30V drain to source voltage (Vdss)


RQ3E070BNTB Applications


There are a lot of ROHM Semiconductor
RQ3E070BNTB applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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