SCT3060ALGC11

new-10%

Manufacturer part number:SCT3060ALGC11

Manufacturer:ROHM Semiconductor

Description:MOSFET NCH 650V 39A TO247N

Case Package:SOT-23

Datasheet:SCT3060ALGC11 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	21 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	175°C TJ
Packaging	Tube
Published	2016
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	SiCFET (Silicon Carbide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	165W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	165W
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	78m Ω @ 13A, 18V
Vgs(th) (Max) @ Id	5.6V @ 6.67mA
Input Capacitance (Ciss) (Max) @ Vds	852pF @ 500V
Current - Continuous Drain (Id) @ 25°C	39A Tc
Gate Charge (Qg) (Max) @ Vgs	58nC @ 18V
Drive Voltage (Max Rds On,Min Rds On)	18V
Vgs (Max)	+22V, -4V
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	39A
Threshold Voltage	2.7V
Drain-source On Resistance-Max	0.078Ohm
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	97A
Max Junction Temperature (Tj)	175°C
Height	25.5mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free