SCT3030KLGC11

new-10%

Manufacturer part number:SCT3030KLGC11

Manufacturer:ROHM Semiconductor

Description:MOSFET NCH 1.2KV 72A TO247N

Case Package:SOT-23

Datasheet:SCT3030KLGC11 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	21 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Manufacturer Package Identifier	SCT3030KLGC11
Operating Temperature	175°C TJ
Packaging	Tube
Published	2017
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	SiCFET (Silicon Carbide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	339W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	339W
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	39m Ω @ 27A, 18V
Vgs(th) (Max) @ Id	5.6V @ 13.3mA
Input Capacitance (Ciss) (Max) @ Vds	2222pF @ 800V
Current - Continuous Drain (Id) @ 25°C	72A Tc
Gate Charge (Qg) (Max) @ Vgs	131nC @ 18V
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	18V
Vgs (Max)	+22V, -4V
Turn-Off Delay Time	61 ns
Continuous Drain Current (ID)	72A
Threshold Voltage	4.15V
Gate to Source Voltage (Vgs)	13V
Drain-source On Resistance-Max	0.039Ohm
Drain to Source Breakdown Voltage	1.2kV
Pulsed Drain Current-Max (IDM)	180A
Max Junction Temperature (Tj)	175°C
Height	25.5mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free