SCT3080ALGC11

new-10%

Manufacturer part number:SCT3080ALGC11

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 650V 30A TO247

Case Package:SOT-23

Datasheet:SCT3080ALGC11 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	21 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON CARBIDE
Operating Temperature	175°C TJ
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	134W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	104m Ω @ 10A, 18V
Vgs(th) (Max) @ Id	5.6V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds	571pF @ 500V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 18V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	18V
Vgs (Max)	+22V, -4V
Drain Current-Max (Abs) (ID)	30A
Drain-source On Resistance-Max	0.104Ohm
Pulsed Drain Current-Max (IDM)	75A
DS Breakdown Voltage-Min	650V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free