IPP60R180C7XKSA1 Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1080pF @ 400V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 155mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 600V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IPP60R180C7XKSA1 Features

a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 155mOhm
a 600V drain to source voltage (Vdss)

IPP60R180C7XKSA1 Applications

There are a lot of Infineon Technologies
IPP60R180C7XKSA1 applications of single MOSFETs transistors.

• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.