SI1900DL-T1-E3

new-10%

Manufacturer part number:SI1900DL-T1-E3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 30V 0.59A 6-Pin SC-70 T/R

Case Package:SOT-23

Datasheet:SI1900DL-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	7.512624mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	480mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	270mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI1900
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	270mW
Turn On Delay Time	5 ns
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	480m Ω @ 590mA, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	590mA
Gate Charge (Qg) (Max) @ Vgs	1.4nC @ 10V
Rise Time	8ns
Fall Time (Typ)	8 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	630mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.59A
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	3 V
Height	1mm
Length	2mm
Width	1.25mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free