SI1926DL-T1-E3

new-10%

Manufacturer part number:SI1926DL-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 60V 0.37A 0.51W

Case Package:SOT-23

Datasheet:SI1926DL-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	1.4Ohm
Subcategory	FET General Purpose Power
Max Power Dissipation	510mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI1926
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	6.5 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.4 Ω @ 340mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	18.5pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	1.4nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	370mA
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.34A
Drain to Source Breakdown Voltage	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1mm
Length	2mm
Width	1.25mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free