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SQ4940AEY-T1_GE3

SQ4940AEY-T1_GE3

SQ4940AEY-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

SOT-23

SQ4940AEY-T1_GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Max Power Dissipation 4W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 24m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 741pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
DS Breakdown Voltage-Min 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 55 pF
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.835026 $0.835026
10 $0.787760 $7.8776
100 $0.743170 $74.317
500 $0.701104 $350.552
1000 $0.661418 $661.418

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