TT8K11TCR

new-10%

Manufacturer part number:TT8K11TCR

Manufacturer:ROHM Semiconductor

Description:MOSFET 2N-CH 30V 3A TSST8

Case Package:SOT-23

Datasheet:TT8K11TCR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2011
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Max Power Dissipation	1W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F8
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	1W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	71m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1A
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 5V
Drain to Source Voltage (Vdss)	30V
Continuous Drain Current (ID)	3A
Drain Current-Max (Abs) (ID)	3A
Drain-source On Resistance-Max	0.109Ohm
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate, 4V Drive
RoHS Status	ROHS3 Compliant