15C01SS-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
15C01SS-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Lead
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
200mW
Pin Count
3
Power - Max
200mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 200mA
Collector Emitter Breakdown Voltage
15V
Frequency - Transition
330MHz
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.853258
$0.853258
10
$0.804960
$8.0496
100
$0.759396
$75.9396
500
$0.716412
$358.206
1000
$0.675860
$675.86
15C01SS-TL-E Product Details
15C01SS-TL-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 200mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
15C01SS-TL-E Features
the DC current gain for this device is 300 @ 10mA 2V the vce saturation(Max) is 300mV @ 10mA, 200mA the emitter base voltage is kept at 5V
15C01SS-TL-E Applications
There are a lot of ON Semiconductor 15C01SS-TL-E applications of single BJT transistors.