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BCX53-10TX

BCX53-10TX

BCX53-10TX

Nexperia USA Inc.

BCX53-10TX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCX53-10TX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 500MW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 140MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.328000 $0.328
10 $0.309434 $3.09434
100 $0.291919 $29.1919
500 $0.275395 $137.6975
1000 $0.259807 $259.807
BCX53-10TX Product Details

BCX53-10TX Overview


This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.

BCX53-10TX Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCX53-10TX Applications


There are a lot of Nexperia USA Inc. BCX53-10TX applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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