BCW70,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BCW70,215 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BCW70
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
250mW
Forward Current
250mA
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Forward Voltage
1.25V
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
Max Repetitive Reverse Voltage (Vrrm)
250V
DC Current Gain (hFE) (Min) @ Ic, Vce
215 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
150mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Max Forward Surge Current (Ifsm)
9A
Height
6.35mm
Length
6.35mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.067800
$0.0678
500
$0.049853
$24.9265
1000
$0.041544
$41.544
2000
$0.038114
$76.228
5000
$0.035620
$178.1
10000
$0.033135
$331.35
15000
$0.032046
$480.69
50000
$0.031510
$1575.5
BCW70,215 Product Details
BCW70,215 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 215 @ 2mA 5V.A VCE saturation (Max) of 150mV @ 2.5mA, 50mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BCW70,215 Features
the DC current gain for this device is 215 @ 2mA 5V the vce saturation(Max) is 150mV @ 2.5mA, 50mA the emitter base voltage is kept at 5V a transition frequency of 100MHz
BCW70,215 Applications
There are a lot of Nexperia USA Inc. BCW70,215 applications of single BJT transistors.