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BCW70,215

BCW70,215

BCW70,215

Nexperia USA Inc.

BCW70,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCW70,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BCW70
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 250mW
Forward Current 250mA
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Forward Voltage 1.25V
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
Max Repetitive Reverse Voltage (Vrrm) 250V
DC Current Gain (hFE) (Min) @ Ic, Vce 215 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 150mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Max Forward Surge Current (Ifsm) 9A
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.067800 $0.0678
500 $0.049853 $24.9265
1000 $0.041544 $41.544
2000 $0.038114 $76.228
5000 $0.035620 $178.1
10000 $0.033135 $331.35
15000 $0.032046 $480.69
50000 $0.031510 $1575.5
BCW70,215 Product Details

BCW70,215 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 215 @ 2mA 5V.A VCE saturation (Max) of 150mV @ 2.5mA, 50mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BCW70,215 Features


the DC current gain for this device is 215 @ 2mA 5V
the vce saturation(Max) is 150mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BCW70,215 Applications


There are a lot of Nexperia USA Inc. BCW70,215 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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