MJ11012G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 20A 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 300mA, 30A.In order to achieve high efficiency, the continuous collector voltage should be kept at 30A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 30A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.4MHz is present in the transition frequency.A maximum collector current of 30A volts can be achieved.
MJ11012G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 4MHz
MJ11012G Applications
There are a lot of ON Semiconductor MJ11012G applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
