SQ4920EY-T1_GE3

new-10%

Manufacturer part number:SQ4920EY-T1_GE3

Manufacturer:Vishay Siliconix

Description:Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET

Case Package:SOT-23

Datasheet:SQ4920EY-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	506.605978mg
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	17.5mOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	4.4W
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Power Dissipation	4.4W
Turn On Delay Time	7 ns
Power - Max	4.4W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	14.5mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1465pF @ 15V
Current - Continuous Drain (Id) @ 25°C	8A
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	8A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.465nF
FET Feature	Logic Level Gate
Drain to Source Resistance	14.5mOhm
Rds On Max	14.5 mΩ
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free