DMG8601UFG-7

new-10%

Manufacturer part number:DMG8601UFG-7

Manufacturer:Diodes Incorporated

Description:Dual N-Channel 20 V 34 mOhm 8.8 nC 0.92 W Silicon Surface Mount Mosfet - UDFN-8

Case Package:SOT-23

Datasheet:DMG8601UFG-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerUDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2011
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Powers
Max Power Dissipation	920mW
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMG8601UFG
Pin Count	8
JESD-30 Code	R-PDSO-N5
Qualification Status	Not Qualified
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	53 ns
FET Type	2 N-Channel (Dual) Common Drain
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	23m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id	1.05V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	143pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	8.8nC @ 4.5V
Rise Time	78ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	234 ns
Turn-Off Delay Time	562 ns
Continuous Drain Current (ID)	6.1A
Gate to Source Voltage (Vgs)	12V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free