2SC2412KT146R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SC2412KT146R Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
150mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SC2412
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
180MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
50V
Max Frequency
180MHz
Transition Frequency
180MHz
Collector Emitter Saturation Voltage
400mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
7V
hFE Min
120
Continuous Collector Current
150mA
VCEsat-Max
0.4 V
Height
1.1mm
Length
2.9mm
Width
1.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.013372
$0.013372
500
$0.009832
$4.916
1000
$0.008194
$8.194
2000
$0.007517
$15.034
5000
$0.007025
$35.125
10000
$0.006535
$65.35
15000
$0.006320
$94.8
50000
$0.006215
$310.75
2SC2412KT146R Product Details
2SC2412KT146R Overview
This device has a DC current gain of 180 @ 1mA 6V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 150mA.180MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 150mA volts.
2SC2412KT146R Features
the DC current gain for this device is 180 @ 1mA 6V a collector emitter saturation voltage of 400mV the vce saturation(Max) is 400mV @ 5mA, 50mA the emitter base voltage is kept at 7V the current rating of this device is 150mA a transition frequency of 180MHz
2SC2412KT146R Applications
There are a lot of ROHM Semiconductor 2SC2412KT146R applications of single BJT transistors.