MJE2955T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJE2955T Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2010
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
-60V
Max Power Dissipation
75W
Current Rating
-10A
Base Part Number
MJE2955
Polarity
PNP
Element Configuration
Single
Power - Max
75W
Gain Bandwidth Product
2MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
8V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage
400V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
10A
Max Frequency
2MHz
Collector Emitter Saturation Voltage
1.1V
Max Breakdown Voltage
60V
Frequency - Transition
2MHz
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
5V
hFE Min
20
Height
9.28mm
Length
10.28mm
Width
4.82mm
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.267010
$1.26701
10
$1.195292
$11.95292
100
$1.127634
$112.7634
500
$1.063806
$531.903
1000
$1.003591
$1003.591
MJE2955T Product Details
MJE2955T Description
The MJE2955T is a 10A PNP bipolar Power Transistor designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.