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IPI80N04S204AKSA2

IPI80N04S204AKSA2

IPI80N04S204AKSA2

Infineon Technologies

MOSFET N-CH 40V 80A TO262-3

SOT-23

IPI80N04S204AKSA2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series OptiMOS™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 80A
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0037Ohm
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 810 mJ
RoHS Status RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.99000 $0.99
500 $0.9801 $490.05
1000 $0.9702 $970.2
1500 $0.9603 $1440.45
2000 $0.9504 $1900.8
2500 $0.9405 $2351.25

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