SI2342DS-T1-GE3

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Manufacturer part number:SI2342DS-T1-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 8V 6A 3-Pin SOT-23 T/R

Case Package:SOT-23

Datasheet:SI2342DS-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2.5W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Turn On Delay Time	6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	17m Ω @ 7.2A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1070pF @ 4V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	15.8nC @ 4.5V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±5V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	6A
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	5V
Drain Current-Max (Abs) (ID)	6A
Drain to Source Breakdown Voltage	8V
Max Junction Temperature (Tj)	150°C
Height	1.12mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free