PBSS5160U,115 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 500mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 340mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.The part has a transition frequency of 220MHz.Input voltage breakdown is available at 60V volts.In extreme cases, the collector current can be as low as 700mA volts.

PBSS5160U,115 Features

the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 340mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz

PBSS5160U,115 Applications

There are a lot of Nexperia USA Inc. PBSS5160U,115 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting