KSD1616AGBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 50mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.As you can see, the part has a transition frequency of 160MHz.During maximum operation, collector current can be as low as 1A volts.
KSD1616AGBU Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 160MHz
KSD1616AGBU Applications
There are a lot of ON Semiconductor KSD1616AGBU applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
