ST8812FX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
ST8812FX Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOWATT218FX
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Subcategory
Other Transistors
Max Power Dissipation
50W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
ST8812
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
ISOLATED
Power - Max
50W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
7A
DC Current Gain (hFE) (Min) @ Ic, Vce
4.5 @ 5A 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 4A
Collector Emitter Breakdown Voltage
600V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.73000
$1.73
30
$1.47000
$44.1
120
$1.25242
$150.2904
510
$1.02900
$524.79
1,020
$0.85260
$0.8526
ST8812FX Product Details
ST8812FX Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 4.5 @ 5A 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 4A.In extreme cases, the collector current can be as low as 7A volts.
ST8812FX Features
the DC current gain for this device is 4.5 @ 5A 5V the vce saturation(Max) is 3V @ 800mA, 4A
ST8812FX Applications
There are a lot of STMicroelectronics ST8812FX applications of single BJT transistors.