ST8812FX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
ST8812FX Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOWATT218FX
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Subcategory
Other Transistors
Max Power Dissipation
50W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
ST8812
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
ISOLATED
Power - Max
50W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
7A
DC Current Gain (hFE) (Min) @ Ic, Vce
4.5 @ 5A 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 4A
Collector Emitter Breakdown Voltage
600V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.73000
$1.73
30
$1.47000
$44.1
120
$1.25242
$150.2904
510
$1.02900
$524.79
ST8812FX Product Details
ST8812FX Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 4.5 @ 5A 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 4A.In extreme cases, the collector current can be as low as 7A volts.
ST8812FX Features
the DC current gain for this device is 4.5 @ 5A 5V the vce saturation(Max) is 3V @ 800mA, 4A
ST8812FX Applications
There are a lot of STMicroelectronics ST8812FX applications of single BJT transistors.