STB21NK50Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STB21NK50Z Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
NRND (Last Updated: 7 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, SuperMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
270mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Base Part Number
STB21N
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
190W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
190W
Turn On Delay Time
28 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
270m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
2600pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
119nC @ 10V
Rise Time
20ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
70 ns
Continuous Drain Current (ID)
17A
Threshold Voltage
3.75V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
68A
Avalanche Energy Rating (Eas)
850 mJ
Nominal Vgs
3.75 V
Height
4.6mm
Length
10.4mm
Width
9.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2893 items
STB21NK50Z Product Details
STB21NK50Z Description
STB21NK50Z is an N-channel MOSFET in TO-263 package. This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH? technology, achieved through optimization of ST's well established strip-based PowerMESH? layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. STB21NK50Z Features
Designed for automotive applications and AEC-Q101 qualified Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability STB21NK50Z Applications
Switching applications Data storage Gaming Home theater & entertainment Mobile phones
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