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SI3456CDV-T1-E3

SI3456CDV-T1-E3

SI3456CDV-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 7.7A 6TSOP

SOT-23

SI3456CDV-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Supplier Device Package 6-TSOP
Weight 19.986414mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 3.3W Tc
Element Configuration Single
Power Dissipation 2W
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 34mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.7A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 6.1A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 460pF
Drain to Source Resistance 34mOhm
Rds On Max 34 mΩ
Height 1mm
Length 3.05mm
Width 1.65mm
RoHS Status ROHS3 Compliant

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