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STD18N55M5

STD18N55M5

STD18N55M5

STMicroelectronics

STD18N55M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STD18N55M5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series MDmesh™ V
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 180mOhm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Base Part Number STD18
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 90W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 192m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 100V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 9.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 13A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 550V
Pulsed Drain Current-Max (IDM) 56A
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.157859 $1.157859
10 $1.092320 $10.9232
100 $1.030491 $103.0491
500 $0.972161 $486.0805
1000 $0.917133 $917.133
STD18N55M5 Product Details

STD18N55M5 Description


The  STD18N55M5 is an N-channel Power MOSFET based on the MDmesh? M5 innovative vertical process technology combined with the well-known PowerMESH? horizontal layout. 



STD18N55M5 Features


  • Extremely low RDS(on)

  • Low gate charge and input capacitance

  • Excellent switching performance

  • 100% avalanche tested



STD18N55M5  Applications


  • Switching applications


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