STP03D200 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 30mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 500μA, 50mA.The emitter base voltage can be kept at 20V for high efficiency.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.Collector current can be as low as 100mA volts at its maximum.
STP03D200 Features
the DC current gain for this device is 200 @ 30mA 10V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 500μA, 50mA
the emitter base voltage is kept at 20V
STP03D200 Applications
There are a lot of STMicroelectronics STP03D200 applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
