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STGB19NC60KDT4

  • STGB19NC60KDT4
  • STGB19NC60KDT4

STGB19NC60KDT4

STGB19NC60KDT4

STMicroelectronics

STGB19NC60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGB19NC60KDT4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 125W
Terminal Form GULL WING
Base Part Number STGB19
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 125W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 35A
Reverse Recovery Time 31 ns
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 38 ns
Test Condition 480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 12A
Turn Off Time-Nom (toff) 270 ns
Gate Charge 55nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 30ns/105ns
Switching Energy 165μJ (on), 255μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.495194 $1.495194
10 $1.410560 $14.1056
100 $1.330717 $133.0717
500 $1.255393 $627.6965
1000 $1.184333 $1184.333
STGB19NC60KDT4 Product Details

STGB19NC60KDT4 Description


STGB19NC60KDT4 is a 20A, 600v short-circuit rugged IGBT manufactured by STMicroelectronics. The STMicroelectronics STGB19NC60KDT4 is a very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. The STGB19NC60KDT4 operates within ambient temperatures from -55 to 150°C and with a power dissipation of 125W.



STGB19NC60KDT4 Features


  • Low on voltage drop (VCE(sat))

  • Low CRES / CIES ratio (no cross-conduction susceptibility)

  • Short-circuit withstand time 10 μs

  • IGBT co-packaged with ultrafast freewheeling diode

  • In D2PAK package


STGB19NC60KDT4 Applications


High-frequency inverters

DC Drive

AC Drive

Servo Motor Drives and Controllers

Stepper


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