STGB6NC60HDT4

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STGB6NC60HDT4

Manufacturer part number:STGB6NC60HDT4

Manufacturer:STMicroelectronics

Description:STGB6NC60HDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB6NC60HDT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	2.240009g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	56W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	15A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGB6
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Turn On Delay Time	13 ns
Transistor Application	POWER CONTROL
Rise Time	5ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	98 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	15A
Reverse Recovery Time	21 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.7V
Max Breakdown Voltage	600V
Turn On Time	17.3 ns
Test Condition	390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 3A
Continuous Collector Current	12A
Turn Off Time-Nom (toff)	222 ns
Gate Charge	13.6nC
Current - Collector Pulsed (Icm)	21A
Td (on/off) @ 25°C	12ns/76ns
Switching Energy	20μJ (on), 68μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Height	4.6mm
Length	10.4mm
Width	9.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free