STGD10NC60SDT4

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Manufacturer part number:STGD10NC60SDT4

Manufacturer:STMicroelectronics

Description:STGD10NC60SDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGD10NC60SDT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	ULTRA FAST
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	60W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGD10
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	60W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	18A
Reverse Recovery Time	22 ns
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Turn On Time	22.5 ns
Test Condition	390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.65V @ 15V, 5A
Turn Off Time-Nom (toff)	560 ns
Gate Charge	18nC
Current - Collector Pulsed (Icm)	25A
Td (on/off) @ 25°C	19ns/160ns
Switching Energy	60μJ (on), 340μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant