STGP3NC120HD

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Manufacturer part number:STGP3NC120HD

Manufacturer:STMicroelectronics

Description:STGP3NC120HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP3NC120HD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	75W
Base Part Number	STGP3
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Power Dissipation	75W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	GENERAL PURPOSE SWITCHING
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	14A
Reverse Recovery Time	51 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.2V
Max Breakdown Voltage	1.2kV
Turn On Time	18.5 ns
Test Condition	800V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 3A
Turn Off Time-Nom (toff)	680 ns
Gate Charge	24nC
Current - Collector Pulsed (Icm)	20A
Td (on/off) @ 25°C	15ns/118ns
Switching Energy	236μJ (on), 290μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant