IRG4PC50UPBF

new-10%

Manufacturer part number:IRG4PC50UPBF

Manufacturer:Infineon Technologies

Description:IGBT 600V 55A 200W TO247AC

Case Package:SOT-23

Datasheet:IRG4PC50UPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2001
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	200W
Current Rating	55A
Number of Elements	1
Element Configuration	Single
Power Dissipation	200W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	32 ns
Transistor Application	POWER CONTROL
Rise Time	20ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	170 ns
Collector Emitter Voltage (VCEO)	2V
Max Collector Current	55A
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2V
Input Capacitance	4nF
Turn On Time	54 ns
Test Condition	480V, 27A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 27A
Turn Off Time-Nom (toff)	350 ns
Gate Charge	180nC
Current - Collector Pulsed (Icm)	220A
Td (on/off) @ 25°C	32ns/170ns
Switching Energy	120μJ (on), 540μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Height	20.3mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free