STGP30V60F

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Manufacturer part number:STGP30V60F

Manufacturer:STMicroelectronics

Description:STGP30V60F datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP30V60F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Power Dissipation	260W
Base Part Number	STGP30
Element Configuration	Single
Power Dissipation	260W
Input Type	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.3V
Test Condition	400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 30A
IGBT Type	Trench Field Stop
Gate Charge	163nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	45ns/189ns
Switching Energy	383μJ (on), 233μJ (off)
Height	15.75mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$4.780880	$4.78088
10	$4.510264	$45.10264
100	$4.254966	$425.4966
500	$4.014119	$2007.0595
1000	$3.786905	$3786.905

STGP30V60F Description

This STGP30V60F is an IGBT developed using an advanced proprietary trench gate field stop structure. The transistor STGP30V60F is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.