IGW30N60TPXKSA1

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Manufacturer part number:IGW30N60TPXKSA1

Manufacturer:Infineon Technologies

Description:IGW30N60TPXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IGW30N60TPXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2006
Series	TrenchStop™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Power Dissipation	200W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE
Input Type	Standard
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	53A
Collector Emitter Breakdown Voltage	600V
Turn On Time	38 ns
Test Condition	400V, 30A, 10.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 30A
Turn Off Time-Nom (toff)	279 ns
IGBT Type	Trench Field Stop
Gate Charge	130nC
Current - Collector Pulsed (Icm)	90A
Td (on/off) @ 25°C	15ns/179ns
Switching Energy	710μJ (on), 420μJ (off)
RoHS Status	ROHS3 Compliant