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IKP08N65F5XKSA1

  • IKP08N65F5XKSA1
  • IKP08N65F5XKSA1

IKP08N65F5XKSA1

IKP08N65F5XKSA1

Infineon Technologies

IKP08N65F5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKP08N65F5XKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 70W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Power Dissipation 70W
Input Type Standard
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 18A
Reverse Recovery Time 41 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 4A, 48 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 8A
Gate Charge 22nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 10ns/116ns
Switching Energy 70μJ (on), 20μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 4.8V
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.195083 $1.195083
10 $1.127436 $11.27436
100 $1.063619 $106.3619
500 $1.003414 $501.707
1000 $0.946617 $946.617
IKP08N65F5XKSA1 Product Details

IKP08N65F5XKSA1 Description


The IKP08N65F5XKSA1 is a High Speed 650 V, hard-switching IGBT TRENCHSTOP? 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT.



IKP08N65F5XKSA1 Features


  • 650 V breakthrough voltage

  • Compared to best-in-class HighSpeed 3 family

  • Factor 2.5 lower Qg

  • Factor 2 reduction in switching losses

  • 200mV reduction in VCEsat

  • Co-packed with Rapid Si-diode technology

  • Low COES/EOSS

  • Mild positive temperature coefficient VCEsat

  • Temperature stability of Vf



IKP08N65F5XKSA1 Applicaitons


  • Uninterruptible power supply (UPS) system

  • Industrial heating and welding


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