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APT13GP120BG

APT13GP120BG

APT13GP120BG

Microsemi Corporation

Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247

SOT-23

APT13GP120BG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 1.2kV
Max Power Dissipation 250W
Current Rating 41A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 41A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 21 ns
Test Condition 600V, 13A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 13A
Turn Off Time-Nom (toff) 270 ns
IGBT Type PT
Gate Charge 55nC
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C 9ns/28ns
Switching Energy 115μJ (on), 165μJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
81 $6.78420 $549.5202

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