STGWF30NC60S

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Manufacturer part number:STGWF30NC60S

Manufacturer:STMicroelectronics

Description:STGWF30NC60S datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGWF30NC60S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	79W
Base Part Number	STGWF30
Pin Count	2
Number of Elements	1
Element Configuration	Single
Case Connection	ISOLATED
Input Type	Standard
Turn On Delay Time	21.5 ns
Power - Max	79W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	180 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	35A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.5V
Turn On Time	30 ns
Test Condition	480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 20A
Turn Off Time-Nom (toff)	555 ns
Gate Charge	96nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	21.5ns/180ns
Switching Energy	300μJ (on), 1.28mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free