STGW50HF60S

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Manufacturer part number:STGW50HF60S

Manufacturer:STMicroelectronics

Description:STGW50HF60S datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW50HF60S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	284W
Base Part Number	STGW50
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Turn On Delay Time	50 ns
Power - Max	284W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	250 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	110A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.15V
Turn On Time	69 ns
Test Condition	400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.45V @ 15V, 30A
Turn Off Time-Nom (toff)	950 ns
Gate Charge	200nC
Current - Collector Pulsed (Icm)	130A
Td (on/off) @ 25°C	50ns/220ns
Switching Energy	250μJ (on), 4.2mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.7V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free