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IGP30N60H3XKSA1

IGP30N60H3XKSA1

IGP30N60H3XKSA1

Infineon Technologies

IGP30N60H3XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGP30N60H3XKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 187W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 60A
Turn On Time 40 ns
Test Condition 400V, 30A, 10.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
Turn Off Time-Nom (toff) 262 ns
IGBT Type Trench Field Stop
Gate Charge 165nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 18ns/207ns
Switching Energy 1.17mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.14000 $3.14
10 $2.81800 $28.18
100 $2.30860 $230.86
500 $1.96524 $982.62
1,000 $1.65743 $1.65743
IGP30N60H3XKSA1 Product Details

IGP30N60H3XKSA1  Features

very low turn-off energy

low VcEsat

low EMI

maximum junction temperature 175°C

qualified according to JEDEC for target applications

Pb-free lead plating, halogen-free mold compound, RoHS compliant



IGP30N60H3XKSA1  Applications

uninterruptible power supplies

welding converters

converters with the high switching frequency




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