IKP20N60TXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKP20N60TXKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2006
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
166W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
41ns
JEDEC-95 Code
TO-220AB
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
40A
Turn On Time
36 ns
Test Condition
400V, 20A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 20A
Turn Off Time-Nom (toff)
299 ns
IGBT Type
Trench Field Stop
Gate Charge
120nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
18ns/199ns
Switching Energy
770μJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.28000
$3.28
10
$2.94300
$29.43
100
$2.41150
$241.15
500
$2.05290
$1026.45
1,000
$1.73137
$1.73137
IKP20N60TXKSA1 Product Details
IKP20N60TXKSA1 Description
IKP20N60TXKSA1 is a 600V IGBT in TRENCHSTOP? and Fieldstop technology with a soft, fast recovery anti-parallel Emitter Controlled HE diode. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IKP20N60TXKSA1 is in the PG-TO220-3 package with 166W power dissipation. The Infineon IKP20N60TXKSA1 is designed for Frequency Converters and Uninterrupted Power Supply.
IKP20N60TXKSA1 Features
Lowest VCEsat drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery anti-parallel Emitter Controlled Diode